digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MFE211 ? mfe212 n-chan nel dual gate silicon nitride passivated mos field effect transistors maximum ratings rating symbol value unit drain source voltage v dsx 20 vdc drain gate voltage v dg1 v dg2 35 35 vdc gate current i g1 i g2 10 10 madc drain current ? continuous i d 50 madc total power dissipation @ t a = 25c derate above 25c p d 360 2.4 mw mw/c total power dissipation @ t c = 25c derate above 25c p d 1.2 8.0 watt mw/c storage channel temperature range t stg -65 to +200 c junction temperature range t j -65 to +175 c lead temperature, 1/16? from seated surface for 10 seconds t l 300 c electrical characteristics (t a = 25c unless otherwise noted) characteristics symbol min max unit off characteristics drain source breakdown voltage (i d = 10 adc, v g1s = v g2s = -4.0 vdc) v (br)dsx 20 - vdc gate 1 ? source breakdown voltage (1) (i g1 = 10 madc, v g2s = v ds = 0) v (br)g1so 6.0 - vdc gate 2 ? source breakdown voltage (1) (i g2 = 10 madc, v g1s = v ds = 0) v (br)g2so 6.0 - vdc gate 1 to source cutoff voltage (v ds = 15 vdc, v g2s = 4.0 vdc, i d = 20 adc) MFE211 mfe212 v g1s(off) -0.5 -0.5 -5.5 -4.0 vdc gate 2 to source cutoff voltage (v ds = 15 vdc, v g1s = 0, i d = 20 adc) MFE211 mfe212 v g2s(off) -0.2 -0.2 -2.5 -4.0 vdc gate 1 leakage current (v g1s = 5.0 vdc, v g2s = v ds = 0) (v g1s = -5.0 vdc, v g2s = v ds = 0, t a = 150c) i g1ss - - 10 -10 madc adc gate 2 leakage current (v g2s = 5.0 vdc, v g1s = v ds = 0) (v g2s = -5.0 vdc, v g1s = v ds = 0, t a = 150c) i g2ss - - 10 -10 nadc adc on characteristics zero-gate voltage drain current (2) (v ds = 15 vdc, v g1s = 0, v g2s = 4.0 vdc) i dss 6.0 40 madc small signal characteristics forward transfer admittance (3) (v ds = 15 vdc, v g2s = 4.0 vdc, v g1s = 0, f = 1.0 khz) ? y fs ? 17 40 mmhos reverse transfer capacitance (v ds = 15 vdc, v g2s = 4.0 vdc, i d = 10 madc, f = 1.0 mhz) c rss 0.005 0.05 pf functional characteristics noise figure (v dd = 18 vdc, v gg = 7.0 vdc, f = 200 mhz) (v dd = 24 vdc, v gg = 6.0 vdc, f = 45 mhz) MFE211 mfe212 nf - - 3.5 4.0 db common source power gain (v dd = 18 vdc, v gg = 7.0 vdc, f = 200 mhz) (v dd = 18 vdc, v gg = 6.0 vdc, f = 45 mhz) (v dd = 18 vdc, f lo = 245 mhz, f rf = 200 mhz) MFE211 MFE211 mfe212 g ps g c (5) 24 29 21 35 37 28 db sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120705
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MFE211 ? mfe212 n-chan nel dual gate silicon nitride passivated mos field effect transistors electrical characteristics (t a = 25c unless otherwise noted) characteristics symbol min max unit bandwidth (v dd = 18 vdc, v gg = 7.0 vdc, f = 200 mhz) (v dd = 18 vdc, f lo = 245 mhz, f rf = 200 mhz) (v dd = 18 vdc, v gg = 6.0 vdc, f = 45 mhz) MFE211 mfe212 MFE211 bw 5.0 4.0 3.5 12 7.0 6.0 mhz gain control gate supply voltage (4) (v dd = 18 vdc, g ps = -30 db, f = 200 mhz) (v dd = 18 vdc, g ps = -30 db, f = 45 mhz) MFE211 MFE211 v gg(gc) - - -2.0 1.0 vdc 1. all gate breakdown voltages are measured while the device is conducting rated gate current. this ensures that the gate voltage limiting network is functioning properly. 2. pulse test: pulse width = 300s, duty cycle 2%. 3. this parameter must be measured with bias voltages applied for less than 5 seconds to avoid overheating. the signal is applied to gate 1 with gate 2 at ac ground. 4. g ps is defined as the change in g ps from the value at v gg = 7.0 volts (MFE211). 5. power gain conversion. amplitude at input from local oscillator is adjusted for maximum g c . available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120705
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MFE211 ? mfe212 n-chan nel dual gate silicon nitride passivated mos field effect transistors sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120705
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MFE211 ? mfe212 n-chan nel dual gate silicon nitride passivated mos field effect transistors sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120705
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MFE211 ? mfe212 n-chan nel dual gate silicon nitride passivated mos field effect transistors to-72 inches millimeters dim min max min max a - 0.230 - 5.840 b - 0.195 - 4.950 c - 0.210 - 5.330 d - 0.021 - 0.530 e - 0.030 - 0.760 f - 0.019 - 0.480 g 0.100 bsc 2.540 bsc h - 0.046 - 1.170 j - 0.0480 - 1.220 k 0.500 - 12.700 - l 0.250 - 6.350 - m 45c bsc 45c bsc n 0.050 bsc 1.270 bsc p - 0.050 - 1.270 sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120705
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